Optical observation of quantum-dot formation in sub-critical CdSe layers grown on ZnSe

نویسندگان

  • C. S. Kim
  • M. Kim
  • S. Lee
  • J. K. Furdyna
  • M. Dobrowolska
  • H. Rho
  • L. M. Smith
  • Howard E. Jackson
چکیده

The evolution of CdSe quantum dot (QD) formation on ZnSe was investigated on a series of samples grown by MBE, with nominal CdSe coverages ranging from 1.1 to 2.6 monolayers (ML). Micro-PL data suggest strongly con"ned zero-dimensional excitons even for coverages as low as 1.1 ML. PL and micro-PL data show emission from the QDs as well as from an accompanying 2 D layer; the temperature dependence of these emissions is notably di!erent. Strong red-shifts of both emissions as the CdSe coverage increases are observed. ( 2000 Elsevier Science B.V. All rights reserved. PACS: 78.66.Hf; 78.66.!w; 78.55.Et; 68.65.#g; 81.15.Hi

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Effects of Be on the II–VIÕGaAs interface and on CdSe quantum dot formation

The effects of Be on the II–VI/GaAs interface and on CdSe quantum dot ~QD! formation were investigated. A (132) surface reconstruction was observed after a Be–Zn coirradiation of the ~001! GaAs (234) surface. ZnBeSe epilayers grown after the Be–Zn coirradiation show very high crystalline quality with x-ray rocking curve linewidths down to 23 arcsec and a low etch pit density of 4310 cm, and goo...

متن کامل

Segregation-enhanced etching of Cd during Zn deposition on CdSe quantum dots

CdSe/ZnSe quantum structures grown on GaAs~001! by molecular-beam epitaxy were systematically investigated by high-resolution x-ray diffraction and high-resolution transmission-electron microscopy. Half of the initial Cd deposit redesorbs when migration-enhanced epitaxy is used instead of conventional molecular-beam epitaxy for the overgrowth of the CdSe by ZnSe. This result is explained by a s...

متن کامل

Self-organized growth, ripening, and optical properties of wide-bandgap II—VI quantum dots

We discuss the formation of self-assembling II—VI quantum dots during MBE growth, with emphasis on CdSe dots grown on ZnSe. AFM measurements on specimens with uncapped dots show relatively narrow dot size distributions, with typical dot diameters of 35$5 nm. Uncapped CdSe dots are unstable with time, showing clear evidence of ripening. Photoluminescence from capped dots indicates strong exciton...

متن کامل

CdSe quantum dots grown on ZnSe and Zn0.97Be0.03Se by molecular-beam epitaxy: Optical studies

We report detailed studies of the photoluminescence ~PL! properties of CdSe quantum dots ~QDs! grown on ZnSe and Zn0.97Be0.03Se by molecular-beam epitaxy. We performed steady-state and time-resolved PL measurements and observed that nonradiative processes dominate at room temperature ~RT! in the CdSe/Zn0.97Be0.03Se QD structures while these nonradiative processes do not dominate in the CdSe/ZnS...

متن کامل

Investigation of the Third-Order Nonlinear Optical Susceptibilities and Nonlinear Refractive Index In Pbs/Cdse/Cds Spherical Quantum Dot

In this study the third order nonlinear susceptibilities are theoreticallycalculated for an electron confined in an isolated PbS/ CdSe/ CdS spherical core-shellshellquantum dots. Our calculation is associated with intersubband transitions in theconduction band. We used the effective mass approximation in this study which is asimple and straightforward study of the third-order optical nonlineari...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

عنوان ژورنال:

دوره   شماره 

صفحات  -

تاریخ انتشار 2000